The aim of the Nanoelectronics Days is to provide a forum for presentations and discussions on recent advances in nanoelectronics.
While keeping separate Invited Talks for each topic, all topics are bridged by Plenary Keynote Presentations.
The Nanoelectronic Days will especially focus on exploratory research studies within the range of advanced device concepts, revolutionary transistor architectures, new technologies related to CMOS nanoelectronics, spintronics, quantum and molecular devices, bio-hybrid devices, oxide based non-volatile memories, etc.
The topics for original contributions to be submitted to ND 2008 include (but are not limited to) the following main areas:

Nano-devices, device physics and performance, SOI, SiGe, Ge, strained devices, multiple-gate transistors, resonant devices, quantum dots, quantum wires, quantum gates, high-K gate dielectrics, materials for nanodevices, nano-technology, graphene, carbon based devices etc.

Spin related devices, spin transfer and transport, spin polarization, spin waves, spin injection, nanomagnetic structures, magnetic semiconductors, quantum information, molecular magnetism, magnetization dynamics, half metals, tunnel junctions, etc.

Molecule substrate junctions, molecular devices, supramolecular engineering, scanning tunneling spectroscopy, electron transport, molecular structure, self assembly, break junctions, molecular electronics in electrochemical environment.

Nanophotonic high-Q structures, integrated optoelectronic devices, nanoscale terahertz devices, terahertz imaging methods, terahertz nanoscale near-field techniques, terahertz biosensing.

Nonvolatile, FeRAM, RRAM, MRAM, phase change, resistive switching, switching mechanism, ferroelectric and oxide nanostructures, electrode-oxide-electrode systems, carrier transport, switching mechanism, etc.

New architectures, alternative concepts, cross bar memory arrays, device simulation, defect tolerant systems, etc.